Manufacturer Product Number:
TPN1110ENH,L1Q
Product Overview
Manufacturer:
Toshiba Semiconductor and Storage
DiGi Electronics Part Number:
TPN1110ENH,L1Q-DG
Description:
MOSFET N-CH 200V 7.2A 8TSON
Detailed Description:
N-Channel 200 V 7.2A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)
Inventory:
34748 Pcs New Original In Stock
12891567
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TPN1110ENH,L1Q Technical Specifications
Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
Tape & Reel (TR)
Series
U-MOSVIII-H
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
114mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
7 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
600 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
700mW (Ta), 39W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSON Advance (3.1x3.1)
Package / Case
8-PowerVDFN
Base Product Number
TPN1110
Datasheet & Documents
Datasheets
Additional Information
Other Names
TPN1110ENHL1QCT
TPN1110ENHL1QTR
TPN1110ENHL1QDKR
TPN1110ENH,L1Q(M
Standard Package
5,000
Environmental & Export Classification
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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