RN1971FE(TE85L,F)
Manufacturer Product Number:

RN1971FE(TE85L,F)

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

RN1971FE(TE85L,F)-DG

Description:

TRANS 2NPN PREBIAS 0.1W ES6
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6

Inventory:

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12889362
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RN1971FE(TE85L,F) Technical Specifications

Category
Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
100mW
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
ES6
Base Product Number
RN1971

Additional Information

Other Names
RN1971FE(TE85LF)TR
RN1971FE(TE85LF)CT
RN1971FE(TE85LF)DKR
Standard Package
4,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095

Alternative Models

PART NUMBER
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MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
7278
DiGi PART NUMBER
RN1111MFV,L3F-DG
UNIT PRICE
0.02
SUBSTITUTE TYPE
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QUANTITY AVAILABLE
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UNIT PRICE
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SUBSTITUTE TYPE
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PART NUMBER
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DiGi PART NUMBER
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UNIT PRICE
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SUBSTITUTE TYPE
Similar
DIGI Certification
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certification_03
certification_04
cr
certification_015
certification_08
esd
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