2SA949-Y(TE6,F,M)
Manufacturer Product Number:

2SA949-Y(TE6,F,M)

Product Overview

Manufacturer:

Toshiba Semiconductor and Storage

DiGi Electronics Part Number:

2SA949-Y(TE6,F,M)-DG

Description:

TRANS PNP 150V 0.05A TO92MOD
Detailed Description:
Bipolar (BJT) Transistor PNP 150 V 50 mA 120MHz 800 mW Through Hole TO-92MOD

Inventory:

12890185
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2SA949-Y(TE6,F,M) Technical Specifications

Category
Bipolar (BJT), Single Bipolar Transistors
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Packaging
-
Series
-
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
50 mA
Voltage - Collector Emitter Breakdown (Max)
150 V
Vce Saturation (Max) @ Ib, Ic
800mV @ 1mA, 10A
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Power - Max
800 mW
Frequency - Transition
120MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body
Supplier Device Package
TO-92MOD
Base Product Number
2SA949

Additional Information

Other Names
2SA949-Y(TE6FM)
2SA949YTE6FM
Standard Package
1

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0075

Alternative Models

PART NUMBER
2SA1201-Y(TE12L,ZC
MANUFACTURER
Toshiba Semiconductor and Storage
QUANTITY AVAILABLE
788
DiGi PART NUMBER
2SA1201-Y(TE12L,ZC-DG
UNIT PRICE
0.13
SUBSTITUTE TYPE
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