GT110N06S
Manufacturer Product Number:

GT110N06S

Product Overview

Manufacturer:

Goford Semiconductor

DiGi Electronics Part Number:

GT110N06S-DG

Description:

N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
Detailed Description:
N-Channel 60 V 14A (Tc) 3W (Tc) Surface Mount 8-SOP

Inventory:

5028 Pcs New Original In Stock
12974570
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GT110N06S Technical Specifications

Category
FETs, MOSFETs, Single FETs, MOSFETs
Manufacturer
Goford Semiconductor
Packaging
Tape & Reel (TR)
Series
SGT
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
11mOhm @ 14A, 10V
Vgs(th) (Max) @ Id
2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
Standard
Power Dissipation (Max)
3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOP
Package / Case
8-SOIC (0.154", 3.90mm Width)

Datasheet & Documents

Datasheets

Additional Information

Other Names
3141-GT110N06SDKR
3141-GT110N06SCT
3141-GT110N06STR
4822-GT110N06STR
Standard Package
4,000

Environmental & Export Classification

Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certification
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